Capacitance-voltage characteristics of SrTiO_3/LaVO_3 epitaxial heterostructures

摘要

We report a quantitative analysis on the capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor capacitors based on SrTiO_3/LaVO_3 epitaxial heterostructures grown by pulsed laser deposition. The C-V measurement of the heterostructure exhibited a decrease in capacitance by ～20% at positive voltages with an estimated carrier concentration of 8 × 10~(18) cm~(-3). The C-V curve by a simulation was in good agreement with the measurement, confirming the formation of a depletion layer and the estimated carrier concentration. These results suggest that quantitative understanding on the electrical behavior of oxide heterostructures is possible with C-V measurements, with potentially important implications on their device applications.