Response to 'Comment on 'Direct measurement of minority carriers diffusion length using Kelvin probe force microscopy' ' [Appl. Phys. Lett. 96, 216101 (2010)]

摘要

The above paper described a method, based on Kelvin probe force microscopy, to measure minority carrier diffusion length in semiconductors with high spatial resolution. The author of the comment claim that the effect of surface recombination velocity (SRV) has to be taken into account in applying this method to high SRV cases. The comment stems from the fact that our analysis is one-dimensional (and hence neglects carrier diffusion perpendicular to the surface [(y axis) see Fig. 1 in the manuscript] but as we explain below it is a reasonable approximation for many cases.