机译:连续波2 mW输出功率的245-247 nm AlGaN发光二极管的效率下降
Censor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209, USA;
Censor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209, USA;
Censor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209, USA;
Censor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209, USA;
Censor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209, USA;
Censor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209, USA;
Censor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209, USA;
Censor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209, USA Department of Electrical, Computer, and Systems Engineering and Center of Integrated Electronics, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, New York 12180, USA;
Censor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209, USA;
机译:基于AlGaN的280 nm发光二极管,其连续波功率超过1.5 mW
机译:基于AlGaN的280 nm发光二极管,在25 mA时连续波功率超过1 mW
机译:具有超过60 mW连续波输出功率的270 nm拟态紫外发光二极管
机译:连续波二极管泵浦全固态腔内OPO,在3.5 / spl mu / m时的可用输出功率高达270mW
机译:iii-v氮化物基发光二极管的峰值辐射效率和电子漂移引起的效率下降。
机译:具有高镁掺杂效率的特别设计的超晶格p型电子阻挡层的几乎无效率下降的基于AlGaN的紫外线发光二极管
机译:AlGaN深紫外发光二极管的温度依赖性载体重组和效率下垂