Subterahertz oscillations from triple-barrier resonant tunneling diodes with integrated patch antennas

摘要

We report on subterahertz oscillations of resonant tunneling diode oscillators with an integrated patch antenna. The device consists of an InGaAs/InAlAs triple-barrier resonant tunneling diode and a patch antenna on an InP substrate. Current-voltage characteristics indicate a peak current density of 280 kA/cm~2, with a peak-valley ratio of about 3 at room temperature. An oscillation frequency of 517 GHz was observed at room temperature through Fourier transformed infrared spectroscopy. The results agree with electromagnetic analysis.