Subterahertz oscillations from triple-barrier resonant tunneling diodes with integrated patch antennas

摘要

We report on subterahertz oscillations of resonant tunneling diode oscillators with an integratednpatch antenna. The device consists of an InGaAs/InAlAs triple-barrier resonant tunneling diode andna patch antenna on an InP substrate. Current-voltage characteristics indicate a peak current densitynof 280 kA/cm2, with a peak-valley ratio of about 3 at room temperature. An oscillation frequencynof 517 GHz was observed at room temperature through Fourier transformed infrared spectroscopy.nThe results agree with electromagnetic analysis.