Structural and electrical properties of ZnO nanorods and Ti buffer layers

摘要

Vertically-well-aligned ZnO nanorods were synthesized on Ti buffer layers by a metal-organic chemical-vapor deposition process. Structural analyses demonstrated that the ZnO nanorods were well-aligned in the c-axis and ab-plane. Transmission electron microscopy (TEM) showed that the Ti buffer layer was amorphous and interdiffused into the ZnO nanorods. Energy-dispersive spectroscopy (EDS) analysis revealed the Ti buffer layers to be slightly oxide. Extended x-ray absorption fine structure confirmed the TEM and EDS results. The I-V characteristic measurements showed a 20-fold increase in current density with the Ti buffer layer, suggesting excellent electrical contact between the Ti buffer layer and ZnO nanorods.