Micro and nano analysis of 0.2 Ω mm Ti/AI/Ni/Au ohmic contact to AIGaN/GaN

摘要

As GaN technology continues to gain popularity, it is necessary to control the ohmic contact properties and to improve device consistency across the whole wafer. In this paper, we use a range of submicron characterization tools to understand the conduction mechanisms through the AIGaN/GaN ohmic contact. Our results suggest that there is a direct path for electron flow between the two dimensional electron gas and the contact pad. The estimated area of these highly conductive pillars is around 5% of the total contact area.