机译:共掺杂GaN:Zn Si中光致发光的绝对内部量子效率极高
Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284, USA;
Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284, USA;
Institute of Semiconductor Technology, Braunschweig University of Technology, Braunschweig, Germany;
Institute of Semiconductor Technology, Braunschweig University of Technology, Braunschweig, Germany;
Institute of Semiconductor Technology, Braunschweig University of Technology, Braunschweig, Germany;
机译:Si和Zn共掺杂的GaN中光致发光的绝对内部量子效率的测定
机译:Si和Zn共掺杂的GaN中光致发光的绝对内部量子效率的测定
机译:InGaN / GaN多量子阱中光致发光内部量子效率确定方法的比较研究
机译:InGaN / GaN量子阱的绝对内部量子效率
机译:提高尺寸可调溶液中溶液处理的硫化铅量子点的光致发光量子效率。
机译:纳米图案化Si(100)上集成的相变立方GaN的高内部量子效率紫外发射
机译:共掺杂GaN:Zn,Si中光致发光的绝对内部量子效率极高