机译:研究形成后的负偏应力处理后电阻切换趋势的改善
Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;
Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan,Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;
Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;
Department of Electro-Optical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;
Department of Electro-Optical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;
Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan,Department of Electrical Engineering, Stanford University, Stanford, California 94305-4085, USA;
Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute, Chutung,Hsinchu 310, Taiwan;
机译:通过电流应力改善非晶碳基电化学金属化存储器的电阻切换性能
机译:电流应力电阻切换非晶碳基电化学金属化存储器的性能提高
机译:通过电压预应力提高Cu / SiO_2 / Pt电阻存储器的开关均匀性
机译:正偏压和负偏压对HfO_2 / TiN栅堆叠中开关氧化物陷阱的影响
机译:多层薄膜磁阻存储元件的开关阈值研究
机译:硫磺掺杂HFOX基RRAM的电阻切换性能提高
机译:在偏压温度胁迫下的SiON和高k栅极电介质中的“切换缺陷”
机译:转换理论。向贝尔电话实验室报告。非欧姆电阻开关网络的研究