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机译:化学残留物对转移到SiO_2上的化学气相沉积石墨烯的物理和电学性质的影响
Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA;
Department of Electrical Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA;
Department of Mechanical Engineering and Materials Science and Engineering Program, The University of Texas at Austin, One University Station C2200, Austin, Texas 78712, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA;
Texas Instruments Incorporated, Dallas, Texas 75265, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA,Department of Electrical Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA;
Department of Mechanical Engineering and Materials Science and Engineering Program, The University of Texas at Austin, One University Station C2200, Austin, Texas 78712, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA;
机译:椭偏光谱法研究转移残余物对化学气相沉积石墨烯光学性能的影响
机译:椭偏光谱法研究转移残余物对化学气相沉积石墨烯光学性能的影响
机译:原子层化学气相沉积法沉积超薄富硅H化硅酸盐薄膜和H化硅酸盐/ SiO_2双层的物理和电学特征
机译:SiH_4-O_2和TEOS化学在低压化学气相沉积SiO_2膜中硅和氧原子的排列:与热生长SiO_2膜的比较
机译:研究硬质合金切削刀具刀片(硬质合金刀具,化学气相沉积)上化学气相沉积(CVD)金刚石涂层的附着力的机械和物理问题。
机译:低压化学气相沉积中不同氢气流量下生长的石墨烯的物理和电学性质
机译:低压化学气相沉积中不同氢气流量下生长的石墨烯的物理和电学性质
机译:同质外延化学气相沉积金刚石中电学性质与缺陷的相关性