Non-equilibrium charge stability diagrams of a silicon double quantum dot

摘要

We report on the experimental characterization of an electrostatically defined, few-electron double quantum dot in a silicon metal-oxide-semiconductor (MOS) structure. The device incorporates two quasi-one-dimensional channels for sensing the charge states of the double quantum dot. Charge sensor stability diagrams obtained at finite source-drain bias are interpreted and used to find the absolute energy scale of the quantum dots based on a matrix representation of the coupling between the dots and the gates.