Nanoparticle single-electron transistor with metal-bridged top-gate and nanogap electrodes

摘要

Au nanoparticle single-electron transistors with metal-bridged top-gates and nanogap electrodes were fabricated using two consecutive electron beam lithography and electroless Au plating steps. The metal-bridged top-gate electrodes were suspended above electroless Au plated nanogap electrodes. Au nanoparticles (5.2 nm in diameter) were chemisorbed between the nanogap electrodes after top-gate fabrication. Clear Coulomb diamonds were observed at 9 K. The gate capacitance C_g of the top-gate electrodes was 99 zF, which is 10 times larger than that of a similar device with only side-gate electrodes.