机译:银纳米颗粒和SiO_2纳米盘嵌入p-GaN中的表面等离激元增强型发光二极管
School of Materials Science and Engineering, Gwangju Institute of Science and Technology,Gwangju 500-712, South Korea;
School of Materials Science and Engineering, Gwangju Institute of Science and Technology,Gwangju 500-712, South Korea;
School of Materials Science and Engineering, Gwangju Institute of Science and Technology,Gwangju 500-712, South Korea;
Department of Photonic Engineering, Chosun University, Gwangju 501-759, South Korea;
Samsung LED Co. Ltd., Suwon 443-743, South Korea;
Samsung LED Co. Ltd., Suwon 443-743, South Korea;
School of Materials Science and Engineering, Gwangju Institute of Science and Technology,Gwangju 500-712, South Korea;
School of Materials Science and Engineering, Gwangju Institute of Science and Technology,Gwangju 500-712, South Korea,Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology,Gwangju 500-712, South Korea;
机译:使用嵌入p-GaN中的银纳米颗粒的表面等离激元增强型发光二极管
机译:通过优化MgO隔离层的厚度使n-ZnO / i-ZnO / p-GaN异质结发光二极管的局部表面等离子体增强紫外电致发光
机译:通过优化MgO隔离层的厚度使n-ZnO / i-ZnO / p-GaN异质结发光二极管的局部表面等离子体增强紫外电致发光
机译:用于表面等离激元增强的硅光伏的嵌入式银纳米粒子制造
机译:等离子增强拉曼光谱和金和银纳米粒子的荧光光谱。
机译:使用银纳米颗粒嵌入的ZnO薄膜增强InGaN / GaN发光二极管的光提取效率
机译:使用银和铂纳米粒子的IngaN / GaN发光二极管的局部表面等离子体增强近紫外线