Hafnium dioxide as a passivating layer and diffusive barrier in ZnO/Ag Schottky junctions obtained by atomic layer deposition

摘要

This paper reports on ZnO/Ag Schottky junctions obtained by the low temperature atomic layer deposition process. Introducing the thin (from 1.25 to 7.5 nm) layer of hafnium dioxide between the ZnO layer and evaporated Ag Schottky contact improves the rectification ratio to about 105 at 2V. For the ZnO/Ag junctions without the HfO_2 interlayer, the rectification ratio is only 102. We assign this effect to the passivation of ZnO surface accumulation layer that is reported for ZnO thin films.