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Improved endurance of resistive switching TiO_2 thin film by hourglass shaped Magneli filaments

机译：沙漏形的Magneli灯丝提高了电阻转换TiO_2薄膜的耐久性

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摘要

A modified biasing scheme was adopted to improve the electrical endurance characteristics of conducting filamentary resistive switching (RS) in a Pt/TiO_2/Pt RS cell. The modified bias scheme included the application of bias voltages with alternating polarity, even though RS proceeds in non-polar mode, which results in the stable distribution of each resistance states as well as improved endurance. This was attributed to the minimized consumption of oxygen ions in the TiO_2 film, which can be induced by the formation of hourglass-shaped conducting filament (HSCF). The presence of a HSCF was confirmed by high-resolution transmission electron microscopy.
机译：采用改进的偏置方案来改善Pt / TiO_2 / Pt RS电池中进行丝状电阻切换（RS）的耐电特性。改进的偏置方案包括施加具有交替极性的偏置电压，即使RS以非极性模式运行，这也会导致每个电阻状态的稳定分布以及提高的耐久性。这归因于TiO_2薄膜中氧离子的消耗最小，这可以通过形成沙漏形导电丝（HSCF）来诱导。通过高分辨率透射电子显微镜确认了HSCF的存在。

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  • 来源
    《Applied Physics Letters》 |2011年第26期|p.262901.1-262901.3|共3页
  • 作者

    Gun Hwan Kim; Jong Ho Lee; Jun Yeong Seok; Seul Ji Song; Jung Ho Yoon; Kyung Jean Yoon; Min Hwan Lee; Kyung Min Kim; Hyung Dong Lee; Seung Wook Ryu; Tae Joo Park; Cheol Seong Hwang;

  • 作者单位

    WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea;

    WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea;

    WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea;

    WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea;

    WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea;

    WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea;

    WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea;

    WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea;

    Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA;

    Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA;

    Department of Materials Engineering, Hanyang University, Ansan, 426-791, Korea;

    WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea;

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  • 入库时间 2022-08-18 03:18:01

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