机译:任意厚度的门控半导体平板中的等离子体共振
lnstitut d'tlectronique du Sud, UMR 5214 CNRS, Universite Montpellier 2, 34095 Montpellier Cedex 5,France;
Dipartimento di Ingegneria dell'Innovazione, CNISM, Universita del Salento, 73100 Lecce, Italy;
Semiconductor Physics Institute, A. GoStauto 11, LT-01108 Vilnius, Lithuania;
Semiconductor Physics Institute, A. GoStauto 11, LT-01108 Vilnius, Lithuania;
Semiconductor Physics Institute, A. GoStauto 11, LT-01108 Vilnius, Lithuania;
Semiconductor Physics Institute, A. GoStauto 11, LT-01108 Vilnius, Lithuania;
Semiconductor Physics Institute, A. GoStauto 11, LT-01108 Vilnius, Lithuania;
Semiconductor Physics Institute, A. GoStauto 11, LT-01108 Vilnius, Lithuania;
机译:门控半导体平板中混合等离子体共振的外部激发:分析研究
机译:门控半导体平板中混合等离子体共振的外部激发:分析研究
机译:飞秒光脉冲激发的半导体平板中的厚度可调太赫兹等离子体振荡
机译:离子回旋共振等离子体净化等离子体源半导体的离子注入掺杂
机译:π共轭半导体系统的光学检测磁共振研究
机译:用荧光共振能量转移和全内反射荧光显微镜测量血浆膜ATP门控的P2X2和α4β2烟碱通道之间的埃尺度相互作用
机译:任意厚度和几何形状的二维半导体中的带电缺陷:配方和应用于几层黑色磷
机译:通过各向异性等离子体平板在任意角度的传播