机译:渗透垂直介质的记录研究
'San Jose Research Center, Hitachi Global Storage Technologies, 3403 Yerba Buena Rd., San Jose,California 95135, USA;
Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany;
Laboratoire de Chimie de la Matiere Condensee de Paris, CNRS, Universite Pierre et Marie Curie-Paris 6, 75252 Paris Cedex 05, France;
Laboratoire de Chimie de la Matiere Condensee de Paris, CNRS, Universite Pierre et Marie Curie-Paris 6, 75252 Paris Cedex 05, France;
'San Jose Research Center, Hitachi Global Storage Technologies, 3403 Yerba Buena Rd., San Jose,California 95135, USA;
Institute for Integrative Nanosciences, IFW Dresden,HelmholtzstraBe 20, 01069 Dresden, Germany;
Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany;
机译:CoPtCr–SiO $ _ {2} $垂直磁记录介质的位渗透研究
机译:CoPtCr-SiO_2垂直磁记录介质的位渗透研究
机译:渗透性垂直介质的制备,微结构,磁性和记录性能
机译:用于垂直记录的渗透介质的微磁能量屏障计算
机译:扩展垂直记录介质中的记录密度。
机译:Ru中间层的斜入射溅射用于垂直记录介质中晶间交换的解耦
机译:渗透性垂直介质的制备,微结构,磁性和记录性能