Large optical gain AIGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes

摘要

The gain characteristics of high Al-content AIGaN-delta-GaN quantum wells (QWs) are investigated for mid- and deep-ultraviolet (UV) lasers. The insertion of an ultrathin GaN layer in high Al-content AlGaN QWs leads to valence subbands rearrangement, which in turn results in large optical gain for mid- and deep-UV lasers.