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机译:MgO隧道结的自转矩切换窗口,热稳定性和材料参数
Institut d'Electronique Fondamentale, Univ. Paris-Sud, 91405 Orsay, France and UMR 8622, CNRS,91405 Orsay, France;
Institut d'Electronique Fondamentale, Univ. Paris-Sud, 91405 Orsay, France and UMR 8622, CNRS,91405 Orsay, France;
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji-shi,Tokyo 185-8601, Japan;
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji-shi,Tokyo 185-8601, Japan;
Institut d'Electronique Fondamentale, Univ. Paris-Sud, 91405 Orsay, France and UMR 8622, CNRS,91405 Orsay, France;
Institut d'Electronique Fondamentale, Univ. Paris-Sud, 91405 Orsay, France and UMR 8622, CNRS,91405 Orsay, France;
Institut d'Electronique Fondamentale, Univ. Paris-Sud, 91405 Orsay, France and UMR 8622, CNRS,91405 Orsay, France;
Institut d'Electronique Fondamentale, Univ. Paris-Sud, 91405 Orsay, France and UMR 8622, CNRS,91405 Orsay, France;
Institut d'Electronique Fondamentale, Univ. Paris-Sud, 91405 Orsay, France and UMR 8622, CNRS,91405 Orsay, France;
Center for Spintronics Integrated Systems, Tohoku University, 2-1-1 Katahira, Aoba- ku, Sendai 980-8577,Japan,Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication,Tohoku University, 2-1-1 Katahira, Aoba- ku, Sendai 980-8577, Japan;
Center for Spintronics Integrated Systems, Tohoku University, 2-1-1 Katahira, Aoba- ku, Sendai 980-8577,Japan,Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication,Tohoku University, 2-1-1 Katahira, Aoba- ku, Sendai 980-8577, Japan;
机译:基于MgO的磁性隧道结中自旋转矩开关的开关概率分布
机译:结尺寸对CoFeB / MgO垂直磁隧道结中开关电流和热稳定性的影响
机译:基于CoFeB-MgO的磁性隧道结的电阻面积积和自旋扭矩转换效率的尺寸依赖性
机译:旋转扭矩二极管效应在MgO的磁隧道结中分析旋转转移切换分析的应用
机译:垂直磁各向异性材料和磁隧道结的切换研究
机译:巨大的热自旋转矩辅助磁隧道结切换
机译:基于mgO的垂直时间分辨自旋扭矩切换 磁化隧道结