Magnetoresistance of Fe3O_4-graphene-Fe_3O_4 junctions

摘要

The magnetoresistance (MR) of Fe_3O_4-graphene-Fe_3O_4 junctions has been experimentally studied at different temperatures. It is found that a barrier exists at the Fe_3O_4/graphene interface. The existence of the interfacial barrier was further confirmed by the nonlinear I-V characteristics and nonmetallic temperature dependence of the interfacial resistance. Moreover, spin dependent transport at the interfaces contributes -1.6% MR to the whole device at room temperature and can be regulated by an external electric field.