机译:双栅极ZnO离子敏感场效应晶体管超越Nernst极限
Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands,Molecular Electronics, Zernike Institute of Advanced Materials, University of Groningen, Nijenborgh 4,9747 AG Groningen, The Netherlands;
Holst Centre/TNO, High Tech Campus 34, 5656 AE Eindhoven, The Netherlands;
Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands;
CNR, Institute for the Study of Nanostructured Materials, Via Gobetti 101, 1-40129 Bologna, Italy;
Molecular Electronics, Zernike Institute of Advanced Materials, University of Groningen, Nijenborgh 4,9747 AG Groningen, The Netherlands,Holst Centre/TNO, High Tech Campus 34, 5656 AE Eindhoven, The Netherlands;
Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands,Molecular Electronics, Zernike Institute of Advanced Materials, University of Groningen, Nijenborgh 4,9747 AG Groningen, The Netherlands;
机译:高度可靠的生物传感器的微波退火效应:使用非晶InGaZnO薄膜晶体管的双门离子敏感场效应晶体管
机译:基于双门纳米带离子敏感场效应晶体管生物传感器的冬虫夏草无标记检测
机译:使用双栅极纳米中的离子敏感场效应晶体管生物传感器直接在高离子强度溶液和人血浆中直接标记蛋白质检测
机译:双门基于纳米带的离子敏感场效应晶体管生物传感器对冬虫夏草的无标记检测
机译:基于N沟道InGaAsP-InP的倒置通道技术器件(ICT)的设计,制造和表征,用于光电集成电路(OEIC):双异质结光电开关(DOES),异质结场效应晶体管(HFET),双极倒置沟道场-效应晶体管(BICFET)和双极型反向沟道光电晶体管(BICPT)。
机译:超薄体中电容耦合双栅离子敏感场效应晶体管的性能增强
机译:双栅极ZnO离子敏感场效应晶体管超越Nernst极限
机译:与ssC电路设计相关的辐射对结型场效应晶体管(JFETs),mOsFET和双极晶体管的影响。