Thermal oxidation of silicon carbide: A comparison of n-type and p-type doped epitaxial layers

摘要

The kinetics of wet thermal oxidation of both n-type and p-type doped 6H-SiC epitaxial layers grown on p-type 6H-SiC wafers has been investigated. The oxidation rates are affected significantly by doping concentration. The kinetics of wet thermal oxidation abides by the Deal-Grove model B. E. Deal and A. S. Grove, [J. Appl. Phys. 36, 3770 (1965)]. The linear oxidation rate constant B/A and the parabolic oxidation rate constant B are obtained by fitting the measured data to the Deal-Grove model.