Nonvolatile resistive switching in Pr_(0.7)Ca_(0.3)Mn0_3 devices using multilayer graphene electrodes

Wootae Lee; Gunho Jo; Sangchul Lee; Jubong Park; Minseok Jo; Joonmyoung Lee; Seungjae Jung; Seonghyun Kim; Jungho Shin; Sangsu Park; Takhee Lee; Hyunsang Hwang

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Nonvolatile resistive switching in Pr_(0.7)Ca_(0.3)Mn0_3 devices using multilayer graphene electrodes

机译：使用多层石墨烯电极的Pr_（0.7）Ca_（0.3）Mn0_3器件中的非易失性电阻切换

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We report resistive switching in Pr_(0.7)Ca_(0.3)MnO_3 (PCMO) devices using multilayer graphene (MLG) for nonvolatile memory applications. When MLG was used as a conducting electrode, PCMO device exhibited resistive switching with an on/off ratio of over two orders of magnitude and stable retention characteristics for over 10~4 s at 85 ℃. Raman spectroscopy in both resistance states revealed increases in D and D' peaks associated with defects and large shift in G peak position for high-resistance state. This was attributed to formation and dissolution of oxygenated graphene at the MLG/PCMO interface, resulting in resistive switching.

机译：我们报告了使用多层石墨烯（MLG）的Pr_（0.7）Ca_（0.3）MnO_3（PCMO）器件中的电阻性开关，用于非易失性存储应用。当将MLG用作导电电极时，PCMO器件在85℃下表现出电阻切换，其开/关比超过两个数量级，并且保持特性稳定超过10〜4 s。在两种电阻状态下的拉曼光谱显示，与缺陷相关的D和D'峰增加，并且对于高电阻状态，G峰位置发生了较大变化。这归因于在MLG / PCMO界面处氧化石墨烯的形成和溶解，从而导致电阻切换。

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《Applied Physics Letters》 |2011年第3期|p.032105.1-032105.3|共3页
作者
Wootae Lee; Gunho Jo; Sangchul Lee; Jubong Park; Minseok Jo; Joonmyoung Lee; Seungjae Jung; Seonghyun Kim; Jungho Shin; Sangsu Park; Takhee Lee; Hyunsang Hwang;
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作者单位

School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea;

School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea;

Department of Nanobio Materials and Electronics (WCU), Gwangju Institute of Science and Technology(GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea;

School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea;

School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea;

School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea;

School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea;

School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea;

School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea;

Department of Nanobio Materials and Electronics (WCU), Gwangju Institute of Science and Technology(GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea;

School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea,Department of Nanobio Materials and Electronics (WCU), Gwangju Institute of Science and Technology(GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea;

School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea,Department of Nanobio Materials and Electronics (WCU), Gwangju Institute of Science and Technology(GIST), 261 Cheomdan-Gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea;

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入库时间 2022-08-18 03:17:45

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Nonvolatile resistive switching in Pr_(0.7)Ca_(0.3)Mn0_3 devices using multilayer graphene electrodes

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