机译:GaN / AlInN量子阱中极化感应电场的测量
Department of Physics, Arizona State University, Tempe, Arizona 85287, USA;
Ecole Polytechnique Federate de Lausanne (EPFL), CH-1015 Lausanne, Switzerland;
Ecole Polytechnique Federate de Lausanne (EPFL), CH-1015 Lausanne, Switzerland;
Ecole Polytechnique Federate de Lausanne (EPFL), CH-1015 Lausanne, Switzerland;
Ecole Polytechnique Federate de Lausanne (EPFL), CH-1015 Lausanne, Switzerland;
Ecole Polytechnique Federate de Lausanne (EPFL), CH-1015 Lausanne, Switzerland;
Department of Physics, Arizona State University, Tempe, Arizona 85287, USA;
Department of Physics, Arizona State University, Tempe, Arizona 85287, USA;
机译:GaN / AlInN量子阱中极化感应电场的测量
机译:极化感应电场对AIN / GaN耦合双量子阱中相干电子隧穿的影响
机译:极化诱导电场在InGaN / GaN量子之字形异质结构中电吸收的比较研究
机译:残余掺杂对GaN / AlGaN量子阱中极化感应电场幅度的影响
机译:利用卫星磁场测量为赤道电离层电流和电场建模
机译:纳米束电子衍射直接测量GaN / AlN中的极化感应场
机译:极化诱导电场在InGaN / GaN量子之字形异质结构中电吸收的比较研究
机译:m面alGaN / GaN和alInN / GaN异质结构的外延生长适用于常驻型GaN基板上的常关模式高功率场效应晶体管