机译:对氮化镓/氧化镓纳米线晶体管的短沟道效应
Department of Electrical Engineering and Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan;
Department of Electrical Engineering and Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan;
Department of Electrical Engineering and Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan;
Department of Electrical Engineering and Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan;
Department of Electrical Engineering and Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan;
Department of Electrical Engineering and Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan;
Department of Electrical Engineering and Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan;
机译:对氮化镓/氧化镓纳米线晶体管的短沟道效应
机译:通过测量和技术-计算机辅助设计仿真研究金属-绝缘体-半导体场效应晶体管和高电子迁移率晶体管的氮化镓/氮化镓铝/氮化镓高压晶体管中的表面电荷和陷阱
机译:使用炉氧化氮化镓薄膜制备的β-氧化镓纳米线扩展栅场效应晶体管pH传感器
机译:顶栅短通道非晶铟 - 镓 - 氧化锌薄膜晶体管,具有亚1.2nm当量氧化物厚度
机译:氧化锌发光二极管,氧化铟锌薄膜晶体管和氮化铝镓/氮化镓高电子迁移率晶体管基生物传感器的制造与表征。
机译:通过氮化硅衬底上电化学沉积的氧化镓的氮化合成氮化镓纳米结构
机译:氮化镓纳米线通过氮化硅上电化学生长的氧化镓进行氮化