机译:晶相相界附近的Na_(0.5)Bi_(0.5)TiO_3-x%BaTiO_3单晶中直流电场引起的应变和相变的晶体学方向依赖性
Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA;
Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA;
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA;
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA;
机译:电场引起的无铅相变相界上的相变:以93%(Bi_(0.5)Na_(0.5))TiO_3-7%BaTiO_3压电陶瓷为例
机译:无铅(Na_(0.5)Bi_(0.5))TiO_3-BaTiO_3-(K_(0.5)Na_(0.5))NbO_3单晶的巨应变和电场诱导的相变
机译:Na_(0.5)Bi_(0.5)TiO_3-xat。%BaTiO_3晶体的菱面体相中共存的四边形区域在趋晶相边界上对增强压电性能的作用
机译:压电,电介质和热电性在Morphopic相位边界MnO_2掺杂Bi_(0.5)(Na_(0.82)K_(0.18))_(0.5)TiO_3 / P(VDF-TRFE)0-3复合材料
机译:单轴应力对单晶中磁场感应的铁磁相变的影响
机译:外延单晶Co0.5(Mg0.55Zn0.45)0.5O1-v薄膜中的氧空位控制多个磁相
机译:$(1-x)Na_ {0.5} Bi_ {0.5} TiO_ {3} -xBaTiO_ {3} $的同相相界处巨大响应函数的原子起源