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机译:氧退火对以随机电报噪声为特征的高k栅堆叠缺陷的影响
Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan;
Department of Electronic Engineering, Cheng Shiu University, No. 840, Chengcing Road, Niaosong, Kaohsiung 83347, Taiwan;
Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan;
Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for MicrolNano Science and Technology, National Cheng Kung University, No. 1, Ta Hseuh Road, Tainan 70101, Taiwan;
Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for MicrolNano Science and Technology, National Cheng Kung University, No. 1, Ta Hseuh Road, Tainan 70101, Taiwan;
Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for MicrolNano Science and Technology, National Cheng Kung University, No. 1, Ta Hseuh Road, Tainan 70101, Taiwan;
United Microelectronics Corporation, Ltd., Tainan Science-Based Industrial Park, Tainan 74145, Taiwan;
United Microelectronics Corporation, Ltd., Tainan Science-Based Industrial Park, Tainan 74145, Taiwan;
United Microelectronics Corporation, Ltd., Tainan Science-Based Industrial Park, Tainan 74145, Taiwan;
United Microelectronics Corporation, Ltd., Tainan Science-Based Industrial Park, Tainan 74145, Taiwan;
机译:氧退火对以随机电报噪声为特征的高k栅堆叠缺陷的影响
机译:通过低频(1 / f)噪声和随机电报噪声分析研究Hf_(0.83)Zr_(0.17)O_2高k栅堆叠p型MOSFET的陷阱性质
机译:低频噪声和随机电报噪声表征对退火工艺对高k /金属栅n沟道金属氧化物半导体场效应晶体管陷阱性质的影响
机译:新栅极电流随机电报噪声(i_g-rtn)方法观察高k栅极电介质MOSFET中的捕获和脱落效应
机译:使用随机电报信号进行半导体/栅极介电缺陷的测量,建模和仿真。
机译:氧化和还原退火对Ge / La2O3 / ZrO2栅叠层电性能的影响
机译:动态门偏置期间随机电报噪声谱对漏极电流波动的影响