Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO_2 fluid treatment

摘要

The tin-doped can supply conduction path to induce resistance switching behavior. However, the defect of tin-doped silicon oxide (Sn:SiO_x) increased the extra leakage path lead to power consumption and joule heating degradation. In the study, supercritical CO_2 fluids treatment was used to improve resistive switching property. The current conduction of high resistant state in post-treated Sn:SiO_x film was transferred to Schottky emission from Frenkel-Poole due to the passivation effect. The molecular reaction model is proposed that the defect was passivated through dehydroxyl effect of supercritical fluid technology, verified by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy.