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首页> 外文期刊>Applied Physics Letters >Characterization of thiol-functionalized oligo(phenylene-ethynylene)- protected Au nanoparticles by scanning tunneling microscopy and spectroscopy
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Characterization of thiol-functionalized oligo(phenylene-ethynylene)- protected Au nanoparticles by scanning tunneling microscopy and spectroscopy

机译:通过扫描隧道显微镜和光谱法表征巯基官能化的低聚(亚苯基-乙炔)保护的金纳米颗粒

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摘要

The electrical properties of Au nanoparticles protected by thiol-functionalized oligo(phenylene-ethynylene) (OPE), 1,4-bis-(3-mercapto-phenylethynyl)benzene have been investigated by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The STM and scanning electron microscopy images of chemisorbed OPE-protected Au nanoparticles on Au(111) surface were similar, and the densities were almost identical. OPE-protected Au nanoparticles exhibited stochastic conductance switching behaviors, and current-voltage (I-V) and log I-V characteristics by STS at 100 K showed Coulomb blockade behaviors. The charging energy of Au nanoparticles was as high as 0.57 eV when the core diameter was 2.1 nm. Our results are significant for single-electron transistor memory applications.
机译:已通过扫描隧道显微镜(STM)和扫描隧道光谱法研究了巯基官能化的低聚(亚苯基亚乙炔基)(OPE),1,4-双-(3-巯基-苯基乙炔基)苯保护的Au纳米粒子的电性能( STS)。化学吸附的OPE保护的Au纳米颗粒在Au(111)表面上的STM和扫描电镜图像相似,并且密度几乎相同。受到OPE保护的Au纳米颗粒表现出随机的电导切换行为,并且在100 K时STS的电流-电压(I-V)和log I-V特性显示出库仑阻塞行为。当核心直径为2.1 nm时,Au纳米粒子的充电能量高达0.57 eV。我们的结果对于单电子晶体管存储应用具有重要意义。

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  • 来源
    《Applied Physics Letters》 |2012年第8期|p.083115.1-083115.5|共5页
  • 作者单位

    Department of Printed Electronics Engineering, Sunchon National University, Sunchon 540-742, Korea;

    Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan,CREST-JST, Yokohama 226-8503, Japan;

    CREST-JST, Yokohama 226-8503, Japan,Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan;

    CREST-JST, Yokohama 226-8503, Japan,Institute for Chemical Research, Kyoto University, Uji 611-0011, Japan,PRESTO-JST, Uji 611-0011, Japan;

    CREST-JST, Yokohama 226-8503, Japan,Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan,Institute for Chemical Research, Kyoto University, Uji 611-0011, Japan;

    Department of Printed Electronics Engineering, Sunchon National University, Sunchon 540-742, Korea;

    Department of Printed Electronics Engineering, Sunchon National University, Sunchon 540-742, Korea,Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan,CREST-JST, Yokohama 226-8503, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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