Improved and color tunable electroluminescence from n-ZnO/HfO_2/p-GaN heterojunction light emitting diodes

摘要

n-ZnO/HfO_2Vp-GaN based heterojunction light emitting diodes were fabricated using a radio frequency magnetron sputtering system. The electroluminescence measurements revealed that dominant violet emissions centered at around 415 nm were emitted and improved performances were observed for the devices with the HfO_2 intermediate layer; the color of the devices could be tuned from violet (0.18, 0.10) to cold white (0.22, 0.20) by varying the Ar/O_2 flow ratio during the deposition of HfO_2, which are probably ascribed to the deep level emission bands in ZnO. The results were studied by peak-deconvolution with Gaussian functions and were discussed in terms of band diagram of the heterojunctions.