The bound states of Fe impurity in wurtzite GaN

摘要

A study on the bound states of Fe impurities in GaN by ultraviolet photoluminescence (PL) emissions is presented. Two elusive PL lines were observed at 3.463 eV (L1) and 3.447 eV (L2), respectively. The intensities of the two lines are proportional to the Fe concentration. The temperature dependence of L1 and L2 revealed acceptor-like and strong localized characteristic, respectively. Furthermore, Raman analysis indicated that L2 is correlated to an exciton bound to a nitride-vacancy (V_N) related complex, i.e., [Fe~(2+)-V_N]. By co-doping with Si, the [Fe~(2+)-V_N]-related bound state will enable the spin-coupling between isolated iron ions.