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Loss of anisotropy in strained ultrathin epitaxial L1_0 Mn-Ga films

机译:应变超薄外延L1_0 Mn-Ga薄膜的各向异性损失

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摘要

We have investigated the magnetization and loss of anisotropy in ultrathin strained and unstrained Mn-Ga films at room temperature. Two Mn-Ga compositions, one of which is doped with Co, were grown on Cr buffered MgO (001) substrates. Films with a thickness below 10 nm are highly strained and the ratio c/a vs. thickness is depending on composition. The perpendicular magnetic anisotropy is shown to be drastically reduced with decreasing thickness and increasing strain. These findings should be considered when generalizing and downscaling results obtained from films > 20 nm. The strain can effectively be reduced by introducing an additional Pt buffer and thus maintaining a high perpendicular magnetic anisotropy for a thickness as low as 6 nm.
机译:我们已经研究了室温下超薄应变和非应变Mn-Ga薄膜的磁化和各向异性损失。在Cr缓冲的MgO(001)衬底上生长两种Mn-Ga组合物,其中一种掺杂有Co。厚度低于10 nm的薄膜具有很高的应变,而c / a与厚度之比取决于组成。随着厚度的减小和应变的增加,垂直磁各向异性被显着减小。当对大于20 nm的胶片进行归纳和按比例缩小结果时,应考虑这些发现。通过引入额外的Pt缓冲液可以有效地减小应变,从而在厚度低至6 nm的情况下保持较高的垂直磁各向异性。

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  • 来源
    《Applied Physics Letters 》 |2013年第16期| 162406.1-162406.4| 共4页
  • 作者单位

    Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany;

    IBM Almaden Research Center, San Jose, California 95120, USA;

    Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany;

    Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany;

    IBM Almaden Research Center, San Jose, California 95120, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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