Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application

摘要

A sputtering process using multi-stacking of carbon and metal thin films with subsequent annealing process to reactively form metal carbides (TiC, TaC, and W_2C) has been presented. Grain sizes of the carbides are as small as 3.9, 3.2, and 1.9 nm for TiC, TaC, and W_2C, respectively. Work functions of TiC, TaC, and W_2C layers have been extracted as 4.3, 4.7, and 4.9 eV, respectively, relatively high values due to oriented growth. W_2C layer formed by the presented process gives high potential to form carbides with nano-sized grain and high work function for gate electrode application.