Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS_2

摘要

The effect of both remote phonon originating from and the screening of extrinsic charged impurity by substrate and gate dielectric on the electron dynamics of single layer M0S_2 are investigated with Monte Carlo method. The temperature-dependent mobility curve measured by Hall effect is reproduced by taking the two counter roles played by substrate and gate dielectric into consideration. Based on the analysis of remote phonon effect and charged impurity screening, an optimized transistor structure which is composed of single HfO_2 gate dielectric with interfacial layer and absence of SiO_2 substrate is proposed for the realization of mobility approaching intrinsic value and best device performance.