机译:利用光调制技术识别GaAs / Al_(0.3)Ga_(0.7)As二维电子气中圆形光电流效应的不同机理
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
机译:In_(0.15)Ga_(0.85)As / Al_(0.3)Ga _(0.7)As多量子阱带内激发时的圆形和线性光电流效应谱
机译:霍尔和光致发光研究对In_(0.15)Ga_(0.85)As / Al_(0.25)Ga_(0.75)As / GaAs高电子迁移率中心处附加In_(0.3)Ga_(0.7)As层的厚度的影响晶体管
机译:(110)衬底上应变In_xGa_(1-x)As / GaAs和无应变GaAs / Al_(0.3)Ga_(0.7)As量子点的电子和光学性质
机译:BST / AL_(0.3)GA_(0.7)N / GaN双异质结构的二维电子气体
机译:半填充AlGaAs / GaAs二维电子系统中的量子输运
机译:InGaAs / GaAs / AlGaAs阶跃量子阱中带间激发的Rashba型和Dresselhaus型圆形光电流效应引起的自旋光电流谱
机译:具有皮秒激光脉冲的GaAs / Al_ {0.3} Ga_ {0.7} As量子阱中声子的产生和检测
机译:光谱椭偏法研究区域中心量子限制效应研究单(al)(0.3)Ga(0.7)as / Gaas / al(0.3)Ga(0.7)as,方形量子阱的介电函数