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Identifying different mechanisms of circular photogalvanic effect in GaAs/Al_(0.3)Ga_(0.7)As two dimensional electron gas by photo-modulation technique

机译:利用光调制技术识别GaAs / Al_(0.3)Ga_(0.7)As二维电子气中圆形光电流效应的不同机理

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摘要

We investigate the circular photogalvanic effect (CPGE) excited by sub-bandgap radiation in a GaAs/Al_(0.3)Ga_(0.7)As two dimensional electron gas and tune its amplitude by synchronously imposing an above-bandgap unpolarized light at normal incidence. With this photo-modulation technique, we identify two microscopic mechanisms of CPGE according to the dramatic change of apparent Rashba and Dresselhaus effects. We suggest the optical transitions to be Franz-Keldysh and intraband regime, respectively. Both regimes coexist in conventional CPGE and the intraband regime dominates at sufficient modulation power.
机译:我们研究在GaAs / Al_(0.3)Ga_(0.7)As二维电子气中由次带隙辐射激发的圆形光电流效应(CPGE),并通过在法向入射时同步施加带隙以上的非偏振光来调整其幅度。通过这种光调制技术,我们根据表观Rashba和Dresselhaus效应的急剧变化确定了CPGE的两种微观机理。我们建议光学跃迁分别为Franz-Keldysh和带内体制。两种方案共存于常规CPGE中,而带内方案则以足够的调制功率起主导作用。

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  • 来源
    《Applied Physics Letters》 |2013年第23期|232402.1-232402.4|共4页
  • 作者单位

    Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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