Tensile-strained germanium microdisks

摘要

We show that a strong tensile strain can be applied to germanium microdisks using silicon nitride stressors. The transferred strain allows one to control the direct band gap emission that is shifted from 1550nm up to 2000nm, corresponding to a biaxial tensile strain around 1%. Both Fabry-Perot and whispering gallery modes are evidenced by room temperature photoluminescence measurements. Quality factors up to 1350 and limited by free carrier absorption of the doped layer are observed for the whispering gallery modes. We discuss the strain profile in the microdisks as a function of the disk geometry. These tensile-strained microdisks are promising candidates to achieve Ge laser emission in compact microresonators.