机译:出版者注:“使用Ge L3边缘x射线吸收近边缘结构光谱法选择性检测非晶GeTe基相变合金中的四面体单元”
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science & Technology (AIST), Tsukuba Central 4, Higashi 1-1-1, Tsukuba 305-8562, Japan,Nanoelectronics Research Institute, National Institute of Advanced Industrial Science & Technology (AIST),Tsukuba Central 4, Higashi 1-1-1, Tsukuba 305-8562, Japan;
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science & Technology (AIST), Tsukuba Central 4, Higashi 1-1-1, Tsukuba 305-8562, Japan,Nanoelectronics Research Institute, National Institute of Advanced Industrial Science & Technology (AIST),Tsukuba Central 4, Higashi 1-1-1, Tsukuba 305-8562, Japan,SPring-8, Japan Synchrotron Radiation Institute (JASRI), Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5198,Japan;
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science & Technology (AIST), Tsukuba Central 4, Higashi 1-1-1, Tsukuba 305-8562, Japan,Nanoelectronics Research Institute, National Institute of Advanced Industrial Science & Technology (AIST),Tsukuba Central 4, Higashi 1-1-1, Tsukuba 305-8562, Japan,SPring-8, Japan Synchrotron Radiation Institute (JASRI), Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5198,Japan;
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science & Technology (AIST),Tsukuba Central 4, Higashi 1-1-1, Tsukuba 305-8562, Japan;
SPring-8, Japan Synchrotron Radiation Institute (JASRI), Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5198,Japan;
COMP/Department of Applied Physics, Aalto University School of Science, P.O. Box 11100, FI-00076 Aalto,Finland;
Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW, United Kingdom;
Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science & Technology (AIST), Tsukuba Central 4, Higashi 1-1-1, Tsukuba 305-8562, Japan,Nanoelectronics Research Institute, National Institute of Advanced Industrial Science & Technology (AIST),Tsukuba Central 4, Higashi 1-1-1, Tsukuba 305-8562, Japan;
机译:出版者的注释:“使用Ge L3边缘x射线吸收近边缘结构光谱法选择性检测非晶GeTe基相变合金中的四面体单元”。物理来吧102,111904(2013)]
机译:Ge L3边缘x射线吸收近边缘结构光谱法选择性检测基于GeTe的非晶态相变合金中的四面体单元
机译:Ge L3边缘x射线外观近边缘结构光谱法选择性检测基于GeTe的非晶态相变合金中的四面体单元
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