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机译:通过温度调制的连续快速熔化生长高质量地形成多层绝缘体上硅锗结构
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan JSPS Research Fellow, 8 Ichiban-cho, Chiyoda-ku, Tokyo 102-8472, Japan Graduate School of Engineering,Nagoya University,Furo-cho,Chikusa-ku,Nagoya 464-8603,Japan.;
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan JSPS Research Fellow, 8 Ichiban-cho, Chiyoda-ku, Tokyo 102-8472, Japan Institute of Applied Physics University of Tsukuba,1-1-1 Tennodai,Tsukuba,Ibaraki 305-8573,Japan;
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;
Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;
机译:通过温度调制的连续快速熔化生长高质量地形成多层绝缘体上硅锗结构
机译:快速熔融生长在石英基板上的高质量单晶锗条纹
机译:从温度调制电阻式气体传感器的响应模式中提取判别信息时,比较不同神经网络结构的成功水平
机译:低温锡诱导熔化生长的高质量混合GeSn / Ge堆叠结构
机译:连续二次编程方法中Lagrange乘法器的可靠选择。
机译:在B-DNA晶体中观察到的局部构象变化不会改善碱基堆积:d(CATGGGCCCATG)2B↔A中间晶体结构中碱基堆积的计算分析
机译:siGe绝缘体(sGOI):用于CmOs应用的两种结构