High linearly polarized light emission from InGaN light-emitting diode with multilayer dielectric/metal wire-grid structure

摘要

We proposed and experimentally demonstrated a linearly polarized light from surface emitting InGaN/GaN green LED with a multilayer structure of combined dielectric/metal wire grids on a low-refractive dielectric layer deposited on the emitting InGaN/GaN surface. An extinction ratio of higher than 20 dB and TM transmission as high as 65% within an angle range of ±40° has been achieved directly from a InGaN/GaN light emitting diode by photoluminescence. FDTD analysis was used to design and analyze the performance of structure and the results between theory and experiment are found to be excellently consistent.