Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot

摘要

We demonstrate a semiconductor quantum dot based electrically pumped single-photon source operating at room temperature. Single photons emitted in the red spectral range from single In_(0.4)Ga_(0.6)N/GaN quantum dots exhibit a second-order correlation value g~((2))(0) of 0.29, and fast recombination lifetime ～1.3 ± 0.3 ns at room temperature. The single-photon source can be driven at an excitation repetition rate of 200 MHz.