机译:垂直磁隧道结中自旋重取向的电场控制-CoFeB和MgO的厚度依赖性
Data Storage Institute, A~*STAR (Agency for Science Technology and Research), 5 Engineering Drive 1,DSI Building, Singapore 117608, Singapore;
Data Storage Institute, A~*STAR (Agency for Science Technology and Research), 5 Engineering Drive 1,DSI Building, Singapore 117608, Singapore;
Data Storage Institute, A~*STAR (Agency for Science Technology and Research), 5 Engineering Drive 1,DSI Building, Singapore 117608, Singapore;
Data Storage Institute, A~*STAR (Agency for Science Technology and Research), 5 Engineering Drive 1,DSI Building, Singapore 117608, Singapore;
机译:勘误表:“垂直磁隧道结中自旋重新取向的电场控制-CoFeB和MgO的厚度依赖性”物理来吧105,042410(2014)]
机译:垂直磁隧道结中自旋重取向的电场控制—CoFeB和MgO的厚度依赖性
机译:底层材料对CoFeB / MgO磁性隧道结中电场控制的垂直磁各向异性的影响
机译:利用压控磁各向异性脉宽优化的垂直磁隧道结无场自旋轨道转矩切换
机译:具有MgO隧道势垒的垂直磁性隧道结
机译:通过在垂直磁隧道结中结合电场和自旋转移转矩效应进行磁化切换
机译:基于CoFeB / mgO的垂直磁隧道结中的电场和自旋转移力矩效应