Magnetoluminescence of light-emitting field-effect transistors based on alpha sexithiophene

摘要

We demonstrated the effect of a magnetic field on the luminous intensity and electric current of light-emitting field-effect transistors (LEFETs) based on alpha sexithiophene (α-6T). Sublimate-grade α-6T was thermally deposited on an n~＋-Si/300 nm-SiO_2 substrate with patterned asymmetric gold-aluminum electrodes to fabricate a bottom-contact LEFET. We observed an increase in luminous intensity of approximately 1.3% under a magnetic field of 100 mT. A possible explanation for this is that the magnetic field increased the probability of singlet formation at the α-6T/Al interface. While the magneto-electroluminescence (MEL) was reported to be derived from the magneto-conductance (MC) in ordinary light emitting diodes, the MEL in LEFET was independent with MC. This indicates that the luminous efficiency can be improved by optimizing the magnetic field effect.