机译:纳米MgOICoFeBITa磁性隧道结中压控垂直各向异性的温度依赖性
Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;
Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA,Inston, Inc., Los Angeles, California 90024, USA;
Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;
Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;
HGST, Inc., San Jose, California 95135, USA;
Singulus Technologies, Kahl am Main 63796, Germany;
Singulus Technologies, Kahl am Main 63796, Germany;
Department of Physics and Astronomy, University of California, Irvine, California 96297, USA;
Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;
机译:具有垂直磁各向异性的Co / Pd多层磁性隧道结的温度和偏置电压依赖性
机译:涡流形成过程对垂直磁隧道结中垂直磁各向异性常数的依赖性
机译:在Cr / Fe / MgO结中的高阶磁各向异性常数和电压控制磁各向异性效应的温度依赖性
机译:利用压控磁各向异性脉宽优化的垂直磁隧道结无场自旋轨道转矩切换
机译:垂直磁各向异性材料和磁隧道结的切换研究
机译:具有垂直磁各向异性的纳米级磁性隧道结对电离辐射的抗扰性
机译:基于Co / pd多层膜的温度和偏压依赖性 具有垂直磁各向异性的磁隧道结