Thermal interface conductance across a graphene/hexagonal boron nitride heterojunction

摘要

We measure thermal transport across a graphene/hexagonal boron nitride (h-BN) interface by electrically heating the graphene and measuring the temperature difference between the graphene and BN using Raman spectroscopy. Because the temperature of the graphene and BN are measured optically, this approach enables nanometer resolution in the cross-plane direction. A temperature drop of 60 K can be achieved across this junction at high electrical powers (14 mW). Based on the temperature difference and the applied power data, we determine the thermal interface conductance of this junction to be 7.4 × 10~6Wm(-2)K~(-1), which is below the 10~7-10~8Wm~(-2)K~(-1) values previously reported for graphene/SiO_2 interface.