Bolometric response of free-standing reduced graphene oxide films

摘要

Free-standing films of reduced graphene oxide were prepared by evaporative drying of drop-cast graphene oxide followed by thermal reduction. The electrical resistance of reduced graphene oxide films showed a strong temperature dependence, reaching a temperature coefficient of resistance of 44 × 10~3 Ω/K at 60 K. The bolometric response under black body illumination was measured from 50 K to 300 K, reaching a voltage responsivity of up to 82 × 10~3V/W at 50 K.