Polarization-induced resistive switching behaviors in complex oxide heterostructures

摘要

Complex oxide heterostructures are fabricated by growing La_(0.67)Ca_(0.33)MnO_3 films on ferroelectric 0.71Pb(Mg_(1/3)Nb_(2/3))O_3-0.29PbTiO_3 (011) single-crystal substrates. The nonvolatile or pulsed resistive switching behaviors induced by an electric field are achieved simultaneously. Further analyses indicate that the different resistive switching behaviors are resulted from co-control of piezostrain and polarization current effects. With decreasing in-plane read current from 0.1 mA to 0.001 mA, the polarization current effect gradually begins to play a more important role than the piezostrain effect. Consequently, the nonvolatile resistive switching behavior is converted to pulse resistive switching behavior. The results further enhance the application of complex oxides in multifunctional memory devices.