机译:自对准波纹外延横向过生长制备的InP / Si异质结光电二极管
Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, School of Information and Communication Technology, KTH-Royal Institute of Technology, Electrum 229, Kista S-164 40, Sweden;
Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, School of Information and Communication Technology, KTH-Royal Institute of Technology, Electrum 229, Kista S-164 40, Sweden;
Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, School of Information and Communication Technology, KTH-Royal Institute of Technology, Electrum 229, Kista S-164 40, Sweden;
机译:通过波纹外延横向过度生长实现原子突变的InP / Si异质结
机译:波纹外延横向过度生长直接在Si上生长InP
机译:外延横向过生长生长的共振腔增强型高速硅光电二极管
机译:氢化物气相外延生长条件对InP / Si(001)衬底上InP外延横向过生长的影响
机译:利用外延横向过生长来增加电压的薄硅太阳能电池的设计,制造和分析
机译:通过自对准双倍外延横向过生长制造的电驱动高效的基于GaN的三维GaN发光二极管
机译:波纹外延横向过度生长形成的直接INP / SI异质结的光学和界面性质