机译:从InGaN / GaN结构中消除沟槽缺陷和Ⅴ-凹坑
Institute of High Pressure Physics, Polish Academy of Science, Sokolowska 29/37, 01-142 Warsaw, Poland and TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;
Institute of High Pressure Physics, Polish Academy of Science, Sokolowska 29/37, 01-142 Warsaw, Poland and TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;
Institute of High Pressure Physics, Polish Academy of Science, Sokolowska 29/37, 01-142 Warsaw, Poland and TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;
Institute of High Pressure Physics, Polish Academy of Science, Sokolowska 29/37, 01-142 Warsaw, Poland and TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;
Institute of High Pressure Physics, Polish Academy of Science, Sokolowska 29/37, 01-142 Warsaw, Poland and TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;
机译:在GaN屏障生长期间使用氢气防止沟槽/ GaN量子阱结构中沟槽缺陷形成的机制
机译:通过通过GaN覆盖层控制消除InGaN / GaN多量子阱结构中的V缺陷,提高了蓝色发光二极管的效率
机译:InGaN / GaN量子阱结构中沟槽状缺陷的阴极发光高光谱成像
机译:通过金属有机气相外延研究在Si(1 1 1)衬底上生长的InGaN / GaN多量子阱中的缺陷结构
机译:极性InGaN / GaN量子阱结构的光学研究
机译:掺杂Si的InGaN底层对不同数量的量子阱的InGaN / GaN量子阱结构的光学性能的影响
机译:InGaN / GaN量子阱结构中沟槽状缺陷的阴极发光高光谱成像