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机译:具有量子点的掺Ge的InGaO薄膜晶体管的光电流增强
Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin, Gyeonggi-do 446-701, South Korea;
Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin, Gyeonggi-do 446-701, South Korea;
Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seoul 133-719, South Korea;
Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seoul 133-719, South Korea;
Institute of Physics and Applied Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea;
Institute of Physics and Applied Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea;
Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin, Gyeonggi-do 446-701, South Korea;
机译:氧分压对掺Ge的InGaO薄膜晶体管性能和稳定性的影响
机译:氧分压对掺Ge的InGaO薄膜晶体管性能和稳定性的影响
机译:用于光电化学应用的新型量子点共敏化PbS-Hg / CdS / Cu:ZnO薄膜的光电流高度增强
机译:量子点增强薄膜中量子点的分布
机译:并五苯薄膜晶体管的光电流光谱。
机译:基于量子点/还原氧化石墨烯碎片修饰的ZnO纳米线的高性能光调制薄膜晶体管
机译:CDTE量子点和光系统II多层膜的组装,具有增强的光电流