Voltage control of magnetism in FeGaB/PIN-PMN-PT multiferroic heterostructures for high-power and high-temperature applications

摘要

We report strong voltage tuning of magnetism in FeGaB deposited on [011]-poled Pb(In_(1/2)Nb_(1/2))O_3-Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3 (PIN-PMN-PT) ternary single crystals to achieve more than 2 times broader operational range and increased thermal stability as compared to heterostructures based on binary relaxors. Voltage-induced effective ferromagnetic resonance field shift of 180 Oe for electric field from -6.7 kV/cm to 11 kV/cm was observed in FeGaB/PIN-PMN-PT heterostructures. This strong magnetoelectric coupling combined with excellent electric and temperature stability makes FeGaB/PIN-PMN-PT heterostructures potential candidates for high-power tunable radio frequency/ microwave magnetic device applications.